SiC Power Semiconductor Market Share, Global Overview, Business Growth, Sales Revenue, Competitive Landscape and Industry Expansion Strategies 2023

Dec 10, 2018

SiC Power Semiconductor Market Research Report, by Device (Discrete Devices, Bare Die Device), by Wafer Size (2-inch, 4-inch, 6-inch & above), End Users (Telecommunication, Energy and Power, Power Electronics), by Application — Global Forecast till 2023

Pune, India - December 10, 2018 /MarketersMedia/ —

Key players
The prominent players in the market of SiC power semiconductor are Infineon Technologies AG (Germany), Cree Inc. (Wolfspeed) (USA), Rohm Semiconductor (Japan), STMicroelectronics N.V. (Switzerland), Fuji Electric Co., Ltd. (Japan), On Semiconductor Corporation (US), GENERAL ELECTRIC(US), United Silicon Carbide, Inc. (US), GeneSiC Semiconductor, Inc. (US), Renesas Electronics Corporation (Japan), Monolith Semiconductor Inc. (US), Ascatron AB (Sweden), Pilegrowth Tech S.R.L. (Italy), Graphensic ( Sweden).

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Market Highlights
Silicon Carbide (SC), also known as carborundum, is a unique compound of carbon and silicon and is one of the hardest available materials. Silicon carbide has various advantages over Si (Silicon). SiC provides higher breakdown electric field strength, higher band gap and superior thermal conductivity. The ability of SiC semiconductor to perform at high temperature and high voltage & power has resulted in its demand for motor drives and RF and cellular base stations. Another major factor driving the SiC power semiconductor market is the rise in the air pollution due to various types of combustible fuels such as petroleum, diesel, and others for generating power. Therefore, several countries are focusing to rely on renewable source of energy such as solar and wind. The solar panels use SiC devices that tend to drive the SiC power semiconductor market. Whereas, China is the largest manufacturer of electric vehicle contributing to the demand for SiC semiconductors from the region.

Competitive Analysis
SiC power semiconductor market is witnessing a major growth trend due to increasing demand for semiconductors in various applications in telecommunications, electric vehicles, power generation, and others.
In August 2018, Hitachi Ltd. announced the development of an energy power saving SiC semiconductor named TED-MOS that can be used in electric vehicles (EV) for saving energy.

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Regional Analysis
The global market for SiC power semiconductors is estimated to grow at a significant rate during the forecast period from 2018 to 2023. The geographical analysis of SiC semiconductor market is covered for North America, Europe, Asia-Pacific, and the rest of the world. Asia-Pacific region is expected to dominate the market due to the presence of various key players in the countries such as Japan, South Korea, China, and others. Various key players are investing in Asia-Pacific in search of various opportunities in the emerging economies in the region. Increasing RF devices and cellular base stations in the Asia-Pacific region is also driving the market as the consumer market is increasing for cellular devices. North America is expected to be the second dominating region due to the presence of various research centers and concentration of key players in the region.

TABLE OF CONTENTS
1 Executive Summary
2 Scope Of The Report
2.1 Market Definition
2.2 Scope Of The Study
2.2.1 Research Objectives
2.2.2 Assumptions & Limitations
2.3 Markets Structure
3 Market Research Methodology
3.1 Research Process
3.2 Secondary Research
3.3 Primary Research
3.4 Forecast Model
4 Market Landscape
Continued……

LIST OF TABLES
Table 1 Global SiC Power Semiconductor Market, By Region, 2018–2023
Table 2 North America: SiC Power Semiconductor Market, By Country, 2018–2023
Table 3 Europe: SiC Power Semiconductor Market, By Country, 2018–2023
Table 4 Asia-Pacific: SiC Power Semiconductor Market, By Country, 2018–2023
Table 5 Middle East & Africa: SiC Power Semiconductor Market, By Country, 2018–2023
Continued……

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LIST OF FIGURES
FIGURE 1 Global SiC Power Semiconductor Segmentation
FIGURE 2 Forecast Methodology
FIGURE 3 Porter’s Five Forces Analysis Of Global SiC Power Semiconductor
FIGURE 4 Value Chain Of Global SiC Power Semiconductor
FIGURE 5 Share Of Global SiC Power Semiconductor In 2017, By Country (In %)
Continued……

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Contact Info:
Name: Market Research Future
Organization: Market Research Future
Website: https://www.marketresearchfuture.com/reports/sic-power-semiconductor-market-6441

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SINACABAN, Misamis Occidental —Thirteen years ago Alekhine Nouri becoming the country's youngest FIDE Master. However, making the next step of earning the International Master (IM) title has eluded the now 20-year-old Nouri. But on Sunday, at the 7th ASsean Individual Chess Championships at the AMORAP Adventure Park here, Nouri became an instant IM after placing third in the men's open division. "Nabigla ako. I was only expecting to earn FIDE ratings. My happiness is overwhelming for this feat," Nouri told the Manila Times after securing an outright IM title. After defeating compatriot IM Michael Concio Jr in the ninth and final round on Sunday night, Nouri found himself tied with five foreign rivals with 6 points. Luckily, Nouri clinched third place after the tiebreak was applied. "Hindi pa rin ako maka paniwala. Swerte rin mga highest rated lalo na sa foreigner ang mga naka tunggali ko kaya't pomabor sa atin ang tiebreaker," added Nouri. On the top board in the final round, IM Shrivatri Anuj of India defeated IM James Morris of Australia (5.5 points) to up his total to 7 points, enough to win the men's title that paved the way for him to become the 100th grandmaster in India. Shrivatri was the second Indian to claim the direct GM title at stake in the Governor Henry Oaminal-bankrolled tourney after his then IM compatriot V.S. Raahul did it during the 6th ASEAN meet here last year. Indonesia's Satria Duta Cahaya (5.5 pts) tried to scuttle the strong Vietnamese GM Nguyen Duc Hoa on board 2 tiff but could only settle for a draw after a lengthy struggle. Cahaya's female counterpart WIM Shafira Devi Herfesa could not be denied, however, of the crowning glory as she delivered a monster show in the cash-rich tourney organized by Arena Grandmaster Rey Urbiztondo and supervised by the National Chess Federation of the Philippines headed by GM Jayson Gonzales and International Arbiter Reden Cruz. Already obtaining the women's throne and the Woman Grandmaster title via an untouchable 7-point output with a round to spare, the 18-year-old Indon sensation never tested as she remains on fire in her final round battle. Playing black against Woman FIDE Master Shania Mae Mendoza of the host country, Herfesa looked like in the receiving end in the opening phase but her resourcefulness slowly changed the complexion of the game. In a complicated middle game, Herfesa found a way to build momentum with her more active pieces that led to a blazing assault and Mendoza's resignation in the face of an inevitable mating net. Early leader WIM Marie Antoinette San Diego of the Philippines (5.5 pts) lost steam in the final half of the nine-round hostilities, and yielded in the final round against the Russian IM and last year's ruler Evgenija Ovod of the Federation (5 pts). WIM Ruelle Canino, 18, from Cagayan de Oro City, who finished second here last year, also fell in her final round bout with fellow 5-pointer Woman Grandmaster Nguyen Thi Mai Hung of Vietnam. The top10 players in the men's are IM Shrivatri of India (7 pts), GM Duc Hoa (6.5 pts), FM Nouri (6 pts) , IM Viani (6 pts), IM Nguyen Quoc Hy (6 pts) IM Cahaya (6 pts), IM Ameya Audi of India (6 pts), IM Parang Ritviz of India (6 pts), IM Bala Chandra Prasad Dhulipalla of India (5.5 pts) and IM Morris (5.5 pts). In the women's section are WIM Herfesa, WIM Bordoloi Pratitee, WGM Nguyen Thi Mai Hung, IM Ovod, WIM San Diego, WFM Shree Reddy Keerti, WIM Nguyen Hong Anh, WGM Janelle Mae Frayna and WFM Jemaicah Yap Mendoza.